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Fast Recovery Epitaxial Diode (FRED)
DSEI 60
IFAVM = 69 A VRRM = 200 V trr = 35 ns
VRSM V 200
VRRM V 200
Type
A
C
TO-247 AD
C
DSEI 60-02A
A
C
A = Anode, C = Cathode
Symbol IFRMS IFAVM yyx IFRM IFSM
Test Conditions TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
Maximum Ratings 98 69 800 600 650 540 580 1800 1770 1460 1410 -40...+150 150 -40...+150 A A A A A A A A2s A2s A2s A2s C C C W Nm g
Features
q
q q q q
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine I2t TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine
q q
International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0
TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine TVJ TVJM Tstg Ptot Md Weight TC = 25C Mounting torque
Applications
q
q q q
150 0.8...1.2 6
q
q q
Symbol
Test Conditions
Characteristic Values typ. max. 50 40 11 0.88 1.08 0.70 4.0 0.75 0.25 35 mA mA mA V V V mW K/W K/W K/W ns A
q
Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders
IR
TVJ = 25C TVJ = 25C TVJ = 125C IF = 60 A;
VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM TVJ = 150C TVJ = 25C
Advantages
q q
VF VT0 rT RthJC RthCK RthJA trr IRM
q q q
For power-loss calculations only TVJ = TVJM
High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling
IF = 1 A; -di/dt = 200 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 60 A; -diF/dt = 200 A/ms L 0.05 mH; TVJ = 100C
35 8
50 10
(c) 2000 IXYS All rights reserved
1-2
036
x IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions
DSEI 60, 200V
160 A 140 Qr IF 120 100 80
0.8 C 0.6
TVJ= 100C VR = 100V
IRM
30 A 25
TVJ= 100C VR = 100V
IF= 35A IF= 70A IF=140A
0.4
20 15 10
TVJ=150C
60
IF= 35A IF= 70A IF=140A
TVJ=100C
40 20 0.2
5
TVJ=25C
0 0.0 0.4 0.8 VF 1.2 V 0.0 10 0 100 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt
Fig. 1 Forward current IF versus VF
Fig. 2 Typ. reverse recovery charge Qr versus -diF/dt
70 ns 60 trr 50 40
Fig. 3 Typ. peak reverse current IRM versus -diF/dt
5 V VFR 4
1.6 1.4 Kf 1.2 1.0 0.8 0.6 0.4 0.2 0 40 80 120 C 160 TVJ
TVJ= 100C VR = 100V
TVJ= 100C IF = 100A
2.5 s 2.0 tfr
tfr
3
VFR
1.5
IRM
30 20
IF=35A IF=70A IF=140A
2
1.0
Qr
1 10 0 0 200 400 600 A/ms 800 -diF/dt 1000 0 0 200 400 600 diF/dt
0.5
0.0 A/ms 800
Fig. 4 Dynamic parameters Qr, IRM versus TVJ
1.0 K/W 0.8 ZthJC 0.6
Fig. 5 Typ. recovery time trr versus -diF/dt
Fig. 6 Typ peak forward voltage VFR and tfr versus diF/dt
Dimensions
Dim. A B C D E F G H J K L M
Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 2.2 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.54
Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
0.4
0.2
0.0 0.001
DSEI 60-02
N
0.01
0.1
1 t
s
10
Fig. 7 Transient thermal impedance junction to case
839
(c) 2000 IXYS All rights reserved
2-2

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